Main Article Content
Abstract
Increasing the need for MOSFETs in digital circuits, leads researcher to think beyond conventional MOS transistors. These fundamental limitations have given force to the continuous structural changes in MOS devices with remarkable progress. In the following sections, we have reviewed various MOSFET structures and designs based on different technologies to achieve low standby power dissipation, high ON-OFF current ratio and subthreshold performances under limits. Multi-gate MOSFET are promising candidates for future analog and digital design because of more control of gate over the channel and longer effective channel width.