Main Article Content
Abstract
Low power devices and low cost storage space are in huge demand in today’s scenario of technological race. The tunnel field effect transistor (TFET) transistor is based on the carrier generation using quantum mechanical process of band to band tunnelling. TFET has the capability to meet the requirements of a device which can perform on low supply voltage with reduced leakage currents and also low Sub-threshold Swing (SS). TFET has quite similar type of structure as MOSFET but as far the switching mechanism is concerned, they are far apart. The different possible structures of TFET are described and comparison is done on the basis of above mentioned design parameters.