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Abstract
Due to rapid scaling of semiconductor devices, threshold voltage is also scaled down to some extend which further increases the leakage current of devices. In this paper, Impact of chiral vector on threshold voltage of carbon nanotube is observed for CNTFET device. We have simulated the CNTFET with a number of different combinations of chiral vector pairs using HSPICE tool and considered the Stanford model of CNTFET devices for simulation. It is much clear from the simulated result that in order to have high threshold voltages in CNTFET which is emerging device in nanometer regime, the chiral vectors (m,n) will be relatively smaller.