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Abstract

Nonradiative transitions occurring in semiconductors result in thermal emissions carrying information on the material’s thermal and electronic properties. A simple one-dimensional theoretical model is devised which accounts for the photothermal signal variations due to nonradiative transitions occurring in semiconductor thin films. The theory was verified by determining the transport properties of p-type silicon wafer. We could get the thermal diffusivity, minority carrier lifetime, surface recombination velocity, and minority carrier mobility of CuInS2 thin films, thereby proving the efficiency and simplicity of photothermal beam deflection technique for real time characterization of semiconductor thin films.


 

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How to Cite
Akhtar, S., & Giriya, D. M. N. (2019). Photothermal Beam Deflection Technique for Optoelectronic Properties of Semiconductor Thin Films. European Journal of Business and Social Sciences, 7(4), 2734-2753. Retrieved from https://journals.eduindex.org/index.php/ejbss/article/view/7081